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| SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 50 rDS(on) (W) 0.006 ID (A) 75 TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP75N05-06 SUB75N05-06 N-Channel MOSFET DS Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Operating Junction and Storage Temperature Range Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IAR EAR Symbol VGS Limit "20 75a 70 240 75 280 250c 3.7 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70292 S-05110--Rev. E, 10-Dec-01 www.vishay.com (TO-263)d RthJA RthJC Symbol Limit 40 62.5 0.6 Unit Free Air (TO-220AB) _C/W C/W 2-1 SUP/SUB75N05-06 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 50 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 V, TJ = 125_C VDS = 50 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 75 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 75 A, TJ = 125_C VGS = 10 V, ID = 75 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 60 A 30 120 0.005 0.006 0.010 0.012 S W 50 V 2.0 4.0 "100 1 50 150 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 25 V, RL = 0.33 W ID ^ 75 A, VGEN = 10 V, RG = 2.5 W VDS = 25 V, VGS = 10 V, ID = 75 A VGS = 0 V, VDS = 25 V, f = 1 MHz 4500 1100 360 85 25 25 20 20 50 20 40 100 100 40 ns 120 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/ms m IF = 75 A , VGS = 0 V 1.0 65 5 0.16 75 A 200 1.4 120 8 0.48 V ns A mC Notes a. Pulse test: pulse width v 300 msec, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 70292 S-05110--Rev. E, 10-Dec-01 SUP/SUB75N05-06 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 8, 9, 10 V 200 150 I D - Drain Current (A) 150 6V I D - Drain Current (A) 7V 200 Transfer Characteristics 100 100 50 50 5V 4V TC = 125_C 25_C -55_C 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 150 TC = -55_C 125 r DS(on) - On-Resistance ( ) g fs - Transconductance (S) 25_C 100 125_C 0.006 0.008 On-Resistance vs. Drain Current VGS = 10 V 75 0.004 VGS = 20 V 50 0.002 25 0 0 20 40 ID - Drain Current (A) 60 80 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) Capacitance 8000 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 C - Capacitance (pF) 6000 Ciss 4000 VDS = 25 V ID = 75 A 12 8 2000 Crss 0 0 10 20 Coss 4 0 30 40 50 0 25 50 75 100 125 150 175 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 70292 S-05110--Rev. E, 10-Dec-01 www.vishay.com 2-3 SUP/SUB75N05-06 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 75 A r DS(on) - On-Resistance ( ) (Normalized) 2.0 I S - Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.5 1.0 0.5 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 500 Safe Operating Area 80 100 I D - Drain Current (A) I D - Drain Current (A) 60 Limited by rDS(on) 1 ms 100 ms 40 10 TC = 25_C Single Pulse 20 10 ms 100 ms dc 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 1 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 70292 S-05110--Rev. E, 10-Dec-01 2-4 |
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